Electron beam-induced current imaging with two-angstrom resolution
نویسندگان
چکیده
منابع مشابه
High-resolution Electron-beam Induced Current Imaging of the P-n Junction in Crystalline Silicon on Glass (csg) Solar Cells
The p-n junction of crystalline silicon thin film solar cells on glass (CSG material) has been studied in correlation to high-resolution microstructure analysis. Scanning and transmission electron microscopy (SEM/TEM) have been used to study material-related properties like texture, grain structure and layer structure. Complementary information on the p-n junction properties was obtained by hig...
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Electron-beam-induced deposition EBID is a versatile microand nanofabrication technique based on electron-induced dissociation of metal-carrying gas molecules adsorbed on a target. EBID has the advantage of direct deposition of three-dimensional structures on almost any target geometry. This technique has occasionally been used in focused electron-beam instruments, such as scanning electron mic...
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The one photon absorption (OPA) cross section of a current carrying two-orbital quantum dot (QD) with strong electron-phonon interaction (polaron regime) is considered. Using the self-consistent non-equilibrium Hartree-Fock (HF) approximation, we determine the dependence of OPA cross section on the applied bias voltage, the strength of effective electron-electron interaction, and level spacing ...
متن کاملDepletion region surface effects in electron beam induced current measurements.
Electron beam induced current (EBIC) is a powerful characterization technique which offers the high spatial resolution needed to study polycrystalline solar cells. Current models of EBIC assume that excitations in the p-n junction depletion region result in perfect charge collection efficiency. However we find that in CdTe and Si samples prepared by focused ion beam (FIB) milling, there is a re...
متن کاملKeywords : semiconductor , electron beam induced current , depletion region modulation
I N T R O D U C T I O N The minority carrier diffusion length is one of main parameters characterizing the quality of semiconductor materials. Therefore development of methods for diffusion length measurements and reconstruction of its spatial distribution is very important for the characterization of as-grown semiconductor materials and structures, characterization of technology processes and ...
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ژورنال
عنوان ژورنال: Ultramicroscopy
سال: 2019
ISSN: 0304-3991
DOI: 10.1016/j.ultramic.2019.112852